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本期内容
2021年12/2022年1月刊
封面故事 Cover Story
基于高温热退火氮化铝模板实现MOCVD再生长4英寸高质量无裂纹氮 化铝薄膜
Four-inch high quality crack-free AlN layer grown on a hightemperature annealed AlN template by MOCVD
编者话 Editorial
第二代半导体之GaAs
第二代半导体之GaAs The second generation semiconductors: GaAs
业界动态 Industry
苏州纳米所孙钱团队在硅衬底GaN基纵向功率器件方面取得新进展
Sun Qian's team from Suzhou Institute of Nanotechnology has made new progress in GaN-based vertical power devices on silicon substrates
横向氧化镓 MESFET 功率超前
Lateral gallium oxide MESFET power leading
GaN快充将于2025年占领一半市场
GaN fast charging will occupy half of the market in 2025
业内大咖共聚2021先进半导体创新发展论坛（还看大湾区优势）已圆 满落幕！
The 2021 Advanced Semiconductor Innovation and Development Forum (also looking at the advantages of the Greater Bay Area) has been successfully held!
Wolfspeed 与致瞻科技采用SiC技术提升燃料电池汽车性能
Wolfspeed and Zinsight-tech Adopt SiC Technology to Improve Fuel Cell Vehicle Performance
Qorvo收购UnitedSiC
Qorvo acquires UnitedSiC
宽禁带半导体国家工程研究中心专栏 WBS Column
科技前沿 Research Review
横向氧化镓MESFET前沿进展
Lateral gallium oxide MESFETs power ahead
使用多结LED减小droop效应
Diminishing droop with multi-junction LEDs
伪衬底有望生产出更好的红色微LEDs
Pseudo-substrates promise to produce better red microLEDs
技术 Technology
功率整流器: 
高压氮化镓胜过碳化硅
Power Rectifiers: High-voltage GaN trumps SiC
点缺陷: 
蓝光LED效率的终极杀手
Point defects: the ultimate blue LED efficiency killers
用于芯片级光谱的锁模梳状激光器
Mode-locked comb lasers for chip-scale spectroscopy
用于 SiC 功率 MOSFET 的卓越工艺
A superior process for the SiC power MOSFET
混合键合: 
金的使用
Hybrid bonding: Going for GOLD
九峰山实验室专栏 JFS Laboratory Column
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